STARKVILLE, USA: SemiSouth Laboratories Inc. has announced a reference design and applications note which describes a gate driver optimized for high speed, hard switching of the company’s normally-off SiC vertical JFETs.
The design enables very fast turn-on and turn-off in Isolated Bridge topologies and provides a peak output current of +6/- 3A for fast turn-on transients yielding record low switching energy losses.
Suitable for driving SemiSouth’s 63/50mΩ SJEP120R063 or SJEP120R050 JFETs, demo board SGDR600P1 is a two-stage driver - switching & conduction - featuring a switching frequency of up to 250kHz. Duty cycle is 0 to 100 percent.
Dan Schwob, SemiSouth’s VP of Sales & Marketing, said: “The applications note and demo board describe a driver circuit which enables designers to take advantage of the benefits of our high performance, highly efficient and small JFETs, while keeping the BOM low.” Applications include hard-switched bridge topologies, inverters/converters and IT/telecoms power supplies.